1996. 10. 11
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1281
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) (I
C
=-1A)
High Speed Switching Time : t
stg
=1.0 S(Typ.)
Complementary to KTC3209.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
1.50
0.10 MAX
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
C
N
G
P
H
H
E
D
H
R
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification 0:70 140, Y:120 240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-2
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-50
-
-
V
DC Current Gain
h
FE
(1)(Note)
V
CE
=-2V, I
C
=-0.5A
70
-
240
h
FE
(2)
V
CE
=-2V, I
C
=-1.5A
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1A, I
B
=-0.05A
-
-
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-1A, I
B
=-0.05A
-
-
-1.2
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
40
-
pF
Switching
Time
Turn-on Time
t
on
-
0.1
-
S
Storage Time
t
stg
-
1.0
-
Fall Time
t
f
-
0.1
-
-I =I =0.05A
1%
B1 B2
DUTY CYCLE <
=
I
B1
I
B1
30
CC
V =-30V
I
B2
I
B2
20
s
OUTPUT
INPUT
1996. 10. 11
2/3
KTA1281
Revision No : 0
CE
V (V)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT I (A)
C
C
CE
V - I
COLLECTOR CURRENT
I (A)
C
-30
STATIC CHARACTERISTICS
COLLECTOR CURRENT I (A)
h - I
DC CURRENT GAIN h
FE
10
1k
-0.01
-0.03
-0.1
C
-20
-10
0
-2
-4
-6
-8
-0.4
-0.8
-1.2
-0.8
-1.2
-1.6
-2.0
-0.4
I =-2mA
B
-25
-20
-18
-15
-12
-10
-8
-6
-4
0
V
=-2V
CE
BASE CURRENT
I (mA)
B
0
COLLECTOR EMITTER
VOLTAGE V (V)
CE
BASE-EMITTER
VOLTAGE V (V)
CE
COMMON
EMITTER
Ta=25 C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE
V (V)
-0.2
0
CE
0
V - I
CE
C
C
C
COLLECTOR CURRENT I (A)
V (V)
COLLECTOR-EMITTER VOLTAGE
V - I
CE
C
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-0.4
-0.6
-0.8
-1.0
-1.2
I =-5mA
B
-1
0
-20
-40
-80
-120
-16
0
-200
COMMON EMITTER
Ta=25 C
-200
COMMON EMITTER
-160
-120
-2.0
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
I
=-5mA
0
0
-0.4
B
-1.2
-0.8
-20
-30
-1.6
Ta=100 C
-40
-8
0
-2.8
-2.4
-60
-180
I
=
-5m
A
-0.6
-0.2
-0.4
CE
0
0
-0.4
-0.8
-1.0
-1.2
-200
-120
-16
0
Ta=-55 C
-2.0
COMMON EMITTER
-1.2
-0.8
-1.6
B
-20
-30
-6
0
-4
0
-8
0
-2.8
-2.4
FE
C
-0.3
-1
-3
30
50
100
300
500
COMMON EMITTER
V =-2V
CE
Ta=100 C
Ta=25 C
Ta=-55 C
1996. 10. 11
3/3
KTA1281
Revision No : 0
C
-1.5
0
-1.0
COLLECTOR CURRENT I (A)
-0.5
BASE-TMITTER SATURATION
BE(sat)
COLLECTOR CURRENT I (A)
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
V - I
V - I
C
COLLECTOR CURRENT I (A)
-0.01
-0.03
-0.1
-0.3
-0.01
CE(sat)
COLLECTOR-EMITTER SATURATION
CE(sat)
C
VOLTAGE V (V)
-1
-3
-0.03
-0.05
-0.1
-0.3
-0.5
-1
COMMON EMITTER
I /I =20
C B
Ta=100 C
Ta=25 C
Ta=-55 C
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-0.5
COLLECTOR CURRENT I (A)
-0.2
-0.01
C
-3
-1
SAFE OPERATING AREA
BE(sat)
C
VOLTAGE V (V)
COMMON EMITTER
I /I =20
-0.01
-0.01
-1
-0.1
-0.3
-0.5
-0.05
-0.03
C B
-0.1
-0.03
-0.3
Ta=25 C
Ta=100 C
Ta=-55 C
-3
-1
COLLECTOR POWER DISSIPATION
AMBIENT TEMPERATURE Ta ( C)
200
C
0
0
P - Ta
C
-0.4
-0.8
-1.2
-1.6
-2.0
-2.0
COMMON EMITTER
V =-2V
CE
Ta=1
00
C
Ta=25 C Ta=-55 C
P (mW)
40
80
120
160
200
400
600
800
1000
-10
-30
-100
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
SINGLE
NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
*
DC
OPERATI
ON
Ta=2
5 C
1s
100mS
10mS
1m
S
*
*
*
*
V MAX.
CEO
I MAX.(PULSED)
I MAX.(CONTINUOUS)
C
C
*
1200
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